Amidst an environment of increased demand and decreased capacity in the industry, IceMOS Technology Corporation today announced it has made a capital investment in its Belfast, Ireland fabrication facility to ramp production of 200mm SOI and SiSi direct bonded wafers. The move adds to its sustained production capacity for 100mm, 125mm and 150mm bonded wafers… Read more »
Posts Tagged: Power transistor
NASA Awards IceMOS Technology an SBIR Project to Develop Radiation-Tolerant High-Voltage MOSFET Transistors Critical to Moon to Mars Campaign
IceMOS Technology Corporation today announced the National Aeronautics and Space Administration (NASA) Goddard Space Flight Center (GSFC) awarded it a project to begin work on developing a novel radiation-hard high voltage power transistor. Improvements in power semiconductor devices are critical to power supply applications required in long-term NASA space programs such as “Moon to Mars”… Read more »
